Prof. Dr. Kerstin Volz

Philipps-Universität Marburg

Department of Physics
Structure & Technology Research Laboratory (WZMW)

Hans-Meerwein-Straße, 35032 Marburg
Phone: +49 6421 28-22297
Fax: +49 6421 28-28935


Experimental Physics, structural characterization, transmission electron microscopy, epitaxial growth of semiconductor structures, correlation of structural optical and growth characteristics of functional materials

University Education

2006 Habilitation (Dr. rer. nat. habil.) in Experimental Physics, Philipps-Universität Marburg, “Novel III/V semiconductor structures: from heteroepitaxial growth to quantitative nanoscale analysis”
1999 Doctoral degree in Physics (Dr. rer. nat.), Universität Augsburg / GSI Darmstadt / Philipps-Universität Marburg, Dissertation on “Composition and structure of SiC films formed by ion implantation techniques”, thesis advisor: Prof. W. Ensinger
1996 Diploma degree in Physics (Dipl. Phys.), U Augsburg, supervisor: Prof. B. Stritzker
1990-96 Studies in Physics, Universität Augsburg

Professional Experience

2018-19 Dean of the Department of Physics, Univ. Marburg
2018- Member of the Managing Board of the German Society for Electron Microscopy (DGE)
2015- Managing director of the WZMW
2013- Vice Speaker of the Collaborative Research Center (Sonderforschungsbereich) “Structure and Dynamics of Internal Interfaces” (SFB 1083)
2012- Speaker of the Research Training Group (Graduiertenkolleg) “Funktionalisierung von Halbleitern” (GRK 1782)
2010- Heisenberg-Professor (W3) for Experimental Physics, Philipps-Universität Marburg
2009- co-head (together with Dr. W. Stolz) of Structure and Technology Research Laboratory (STRL) of the WZMW, Philipps-Universität
2009-10 Heisenberg-Professor (W2) for Experimental Physics, Philipps-Universität Marburg
2008-09 Guest professor Institute of Physics, Humboldt Universität zu Berlin
2003-08 DFG-Junior Research group leader, WZMW, Philipps-Universität Marburg
2002 Guest scientist Stanford University (USA) (Prof. J. S. Harris): Feodor Lynen scholarship
1997-00 Several research stays at Osaka National Research Laboratory, Japan

Honours, Awards and other Proofs of Qualification

2020- Member of the “Forschungsbeirat” (Steering Committee) of the
2020- Member of the “Forschungsrat” (Research Council) of the FCMH
2018- Member of the Cooperative Doctoral Platform for Engineering
Sciences and of the Doctoral Committee of the FCMH
2018- Member of the board of the DGE (German Society for Electron
2016- Member of the MRS medal selection committee
2016 Call for a chair (W3) “Advanced Materials” Eberhard Karls
Universität Tübingen in personal union with head of the Nanoanalytics
Center, NMI, Reutlingen, declined
2010 Call for a chair (W3) “Angew. Physik – Halbleitermaterialien” TU
Freiberg, declined
2010 Member at “Internetportal für exzellente Wissenschaftlerinnen” by
Robert-Bosch Foundation and Spektrum-Verlag (upon recommendation by
2009 Patricia Pahamy teaching award, faculty of physics, Philipps-Universität Marburg
2008 Heisenberg professorship of DFG
2001 Feodor Lynen scholarship of Alexander von Humboldt Stiftung
1996 Graduate Student Award of EMRS

Selected Publications

  1. P. J. Klar, H. Grüning, J. Koch, S. Schäfer, K. Volz, W. Stolz, W. Heimbrodt, A. M. Kamal Saadi, A. Lindsay, E. P. O´Reillly, (GaIn)(NAs)-fine structure of the band gap due to nearest neighbour configurations of the isovalent nitrogen, Phys. Rev. B 64, 121203 (2001).
  2. B. Kunert, K. Volz, J. Koch, W. Stolz, Direct band gap Ga(NAsP)-material system pseudomorphically grown on GaP-substrate, Appl. Phys. Lett. 88, 182108 (2006).
  3. I. Németh, B. Kunert, W. Stolz, K. Volz, Heteroepitaxy of GaP on Si: Correlation of morphology, anti-phase-domain structure and MOVPE growth conditions, J. Cryst. Growth 310, 1595 (2008).
  4. K. Volz, A. Beyer, W. Witte, J. Ohlmann, I. Németh, B. Kunert, W. Stolz, GaP-nucleation on exact (001) Si substrates for III/V-device integration, J. Cryst. Growth 315, 37 (2011).
  5. P. Ludewig, N. Knaub, N. Hossein, S. Reinhard, L. Nattermann, I. P. Marko, S. R. Jin, K. Hild, S. Chatterjee, W. Stolz, S. J. Sweeney, K. Volz, Electrical injection Ga(AsBi)/(AlGa)As single quantum well laser, Appl. Phys. Lett. 102, 242115 (2013).
  6. A. Beyer, A. Stegmüller, J. O. Oelerich, K. Jandieri, K. Werner, G. Mette, W. Stolz, Baranovskii, R. Tonner, K. Volz, Pyramidal structure formation at the interface between III/V semiconductors and silicon, Chem. Mater. 28, 3265 (2016).
  7. N. Rosemann, J. P. Eußner, A. Beyer, S. W. Koch, K. Volz, S. Dehnen, S. Chatterjee, A highly efficient directional molecular white-light emitter driven by a continuous-wave laser diode, Science 352, 1301 (2016).
  8. L. Duschek, P. Kükelhan, A. Beyer, S. Firoozabadi, J. O. Oelerich, C. Fuchs, W. Stolz, A. Ballabio, G. Isella, K. Volz, Composition determination of semiconductor alloys towards atomic accuracy by HAADF-STEM, Ultramicroscopy 200, 84 (2019).
  9. S. Ahmed, A. Pokle, S. Schweidler, A. Beyer, M. Bianchini, F. Walther, A. Mazilkin, P. Hartmann, T. Brezesinski, J. Janek, K. Volz, The Role of Intragranular Nanopores in Capacity Fade of Nickel-Rich Layered Li(Ni1–x–yCoxMny)O2 Cathode Materials, ACS Nano 13, 10694 (2019).
  10. S. Ahmed, M. Bianchini, A. Pokle, M. S. Munde, P. Hartmann, T Brezesinski, A. Beyer, J Janek, K. Volz, Visualization of Light Elements using 4D STEM: The Layered‐to‐Rock Salt Phase Transition in LiNiO2 Cathode Material, Adv. Energy Mater. 10, 2001026 (2020).


  1. K. Reuter, J. Sundermeyer, A. Merkulov, W. Stolz, K. Volz, M. Pokoj, Th. Ochs, Tantalund Niob-Verbindungen und ihre Verwendung in der Chemical Vapour Deposition, (DE102005033102A1 & US2007/0042213A1 (2007)).
  2. K. Reuter, J. Sundermeyer, A. Merkulov, W. Stolz, K. Volz, M. Pokoj, Th. Ochs, Wolfram und Molybdän-Verbindungen und ihre Verwendung in der Chemical Vapour Deposition, (DE102006000823A1 & US 2007/0160761 A1 (2007)).
  3. B. Kunert, J. Koch, S. Reinhard, K. Volz, W. Stolz, III/V-Halbleiter (102005004582.0 (2005)).
  4. C. v. Hänisch, B. Ringler, E. Sterzer, A. Beyer, W. Stolz, K. Volz, Verwendung wenigstens einer binären Gruppe 15-Elementverbindung, eine 13/15-Halbleiterschicht und binäre Gruppe 15-Elementverbindungen (DE 10 2014 014 036.9 (2015)).
  5. S. Dehnen, S. Chatterjee, J. P. Eussner, N. W. Rosemann, K. Volz, A. Beyer, Molecular white light emitter (WO2017211669A1 (2016)).