Prof. Dr. Wolfgang Stolz

University Education

1994	Habilitation (Dr. rer. nat. habil.) in Experimental Physics, “Materials science aspects and physical properties of novel III/V-semiconductor heterostructures”, U Marburg
1986	Doctoral degree in Physics (Dr. rer. nat.), U Stuttgart, Dissertation MPI Solid State Research Stuttgart, “Molecular beam epitaxy and optical properties of (GaIn)As/(AlIn)As-quantum well heterostructures”, thesis advisor: Prof. K. H. Ploog
1982	Diploma degree in Physics (Dipl. Phys.), U Heidelberg, MPI Nuclear Physics Heidelberg, “Diffusion of interstitial impurities in amorphous silicon”, supervisor: Dr. S. Kalbitzer
1978-1982	Studies in Physics, TU Karlsruhe and U Heidelberg

Professional Experience

since 2017	Full professor (W3) for Experimental Physics, Semiconductor Physics and Epitaxy, Univ, Marburg
since 2009	Head (jointly with Prof. K. Volz) Structure and Technology Research Laboratory, Material Sciences Center, Univ. Marburg
2007-2012	Coordinator BMBF-Joint Research Program “Monolithic integration of Ga(NAsP)-based laser structures on Si-substrate (MonoLaSi)”
since 2007	Adjunct professor, Optical Sciences Center, Univ. Arizona, Tucson, Az/USA
2004	Co-founder and CTO of NAsP III/V GmbH, Marburg
2002-2009	Speaker DFG-Topical Research Group “Metastable compound semiconductors and heterostructures”
since 1999	Independent technology consultant
1993	Co-founder of sgs Mochem GmbH, Marburg
1989-1909	Research group leader, Material Sciences Center and Department of Physics, Philipps-Universität Marburg
1988-1989	Research Assistant, MPI Solid State Research Stuttgart (Prof. K. H. Ploog)
1987-1988	Guest Scientist, NTT Basic Research Laboratories, Tokyo, Japan, Semiconductor heterostructures (Dr. Y. Horikoshi)
1983-1987	Research Assistant, MPI Solid State Research Stuttgart (Prof. K. H. Ploog)Honours,

Honours, Awards and other Proofs of Qualification

2003	Prize of the German Society of Crystal Growth (DGKK)
1995	Karl-Heinz-Beckurts-Prize (Technology transfer prize of the Federal Ministry of Research and Technology)
1992	Distinguished Scientific Achievement Award (Nippon Telegraph and Telephone Corp., NTT Basic Research Laboratory, Tokyo, Japan)
1976	Mangelsdorff-Prize

Selected Publications

1. G. Bernatz, S. Nau, R. Rettig, H. Jänsch, W. Stolz
   Experimental investigations of structures of interior interfaces in GaAs
   J. Appl. Phys. 86, 6752 (1999).
2. F. Höhnsdorf, J. Koch, S. Leu, W. Stolz, B. Borchert, M. Druminski
   Reduced threshold current densities of (GaIn)(NAs) single quantum well lasers for the emission in the range of 1,28-1,38 µm
   Electron. Lett. 35, 571 (1999).
3. P. J. Klar, H. Grüning, J. Koch, S. Schäfer, K. Volz, W. Stolz, W. Heimbrodt, A. M. Kamal Saadi, A. Lindsay, E. P. O´Reilly
   (GaIn)(NAs)-fine structure of the band gap due to the nearest neighbour configurations of the isovalent nitrogen
   Phys. Rev. B 64, 121203 (2001).
4. B. Kunert, K. Volz, J. Koch, W. Stolz
   Direct band gap Ga(NAsP)-material system pseudomorphically grown on GaP-substrate
   Appl. Phys. Lett. 88, 182108 (2006).
5. K. Volz, A. Beyer, W. Witte, J. Ohlmann, I. Nemeth, B. Kunert, W. Stolz
   GaP-nucleation on exact (001) Si substrates for III/V-device integration
   J. Cryst. Growth 315, 37 (2011).
6. C. Möller, C. Fuchs, C. Berger, A. Ruiz Perez, M. Koch, J. Hader, J.V. Moloney, S.W. Koch, W. Stolz
   Type-II-VECSEL with Watt level output powers at 1.2 µm
   Appl. Phys. Lett. 108, 071102 (2016).

Patents

1. H. Lobentanzer, W. Stolz, K. Ploog, J. Nagle, Light emitting compositional semiconductor device (US-Patent No. 5,057,881 (1991)).
2. W. Stolz, S. Lutgen, Verfahren zur Herstellung von Halbleiterschichtfolgen für optisch gepumpte Halbleitervorrichtung (EP 1 700 363 B1 (2004)).
3. B. Kunert, J. Koch, S. Reinhard, K. Volz, W. Stolz, III/V-Halbleiter (102005004582.0 (2005)).
4. K. Reuter, J. Sundermeyer, A. Merkoulov, W. Stolz, K. Volz, M. Pokoj, T. Ochs, Tantal- und Niob-Verbindungen und ihre Verwendung in der Chemical Vapour Deposition (US 7,442407 B2 (2005)).